| Part Number | 2N6496 Datasheet |
|---|---|
| Manufacturer | SavantIC |
| Overview | ·With TO-3 package ·High collector current rating ·High power dissipation capability ·Wide area of safe operation APPLICATIONS ·For switching and amplifier circuits in Industrial and commercial applic. TICS Tj=25 unless otherwise specified PARAMETER CONDITIONS MIN TYP. MAX UNIT SYMBOL VCEO(SUS) Collector-emitter sustaining voltage IC=0.2A ;IB=0 80 V V(BR)EBO Emitter-base breakdown voltage IE=50mA ;IC=0 7 V VCEsat Collector-emitter saturation voltge IC=8A ;IB=0.8A 1.0 V VBEsat Bas. |
2N6496 Datasheet and Specifications PDF
The 2N6496 is a Silicon Power Transistor.
| Part Number | 2N6496 Datasheet |
|---|---|
| Description | Power Transistors |
| Manufacturer | RCA |
| Overview |
_ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ File No. 698
000800
Solid State Division
Power Transistors
2N5038 2N5039 2N6496
JEDEC TO-3
H-1570
High-Current, High-Power, High-.
* Maximum operating area curves for de and pulse operation * IS/b-limit line beginning at 28 V * High collector current ratings * High-dissipation capability RCA-2N5038. 2N5039, and 2N6496 are epitaxial silicon n-p-n power transistors. They differ in breakdown-voltage ratings, leakage-current, and. |
| Part Number | 2N6496 Datasheet |
|---|---|
| Description | SILICON N-P-N PLANAR TRANSISTORS |
| Manufacturer | GE |
| Overview | . . |