2N6496 Overview
Description
With TO-3 package - High collector current rating - High power dissipation capability - Wide area of safe operation APPLICATIONS - For switching and amplifier circuits in Industrial and commercial applications PINNING PIN 1 2 3 Base Emitter Collector Fig.1 simplified outline (TO-3) and symbol DESCRIPTION SYMBOL VCBO VCEO VEBO IC IB PD Tj Tstg PARAMETER Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Base current Total Power Dissipation Junction temperature Storage temperature TC=25 CONDITIONS Open emitter Open base Open collector VALUE 150 110 7 15 5 140 150 -65~200 UNIT V V V A A W SYMBOL Rth j-c PARAMETER SavantIC Semiconductor Product Specification Silicon NPN Power Transistors 2N6496 CHARACTERISTICS Tj=25 unless otherwise specified PARAMETER CONDITIONS MIN TYP. MAX UNIT SYMBOL VCEO(SUS) Collector-emitter sustaining voltage IC=0.2A ;IB=0 80 V V(BR)EBO Emitter-base breakdown voltage IE=50mA ;IC=0 7 V VCEsat Collector-emitter saturation voltge IC=8A ;IB=0.8A 1.0 V VBEsat Base-emitter saturation voltage IC=8A ;IB=0.8A 2.0 V VBE Base-emitter on voltage IC=8A ; VCE=2V 1.8 V ICEO Collector cut-off current VCE=90V; IB=0 VCE=130V; VBE(off)=1.5V TC=150 VEB=7V; IC=0 1.0 2.0 5.0 1.0 mA ICEV Collector cut-off current mA IEBO Emitter cut-off current mA hFE DC current gain IC=8A ; VCE=2V 12 100 COB Output capacitance IE=0;VCB=10V;f=1MHz 400 pF 2 SavantIC Semiconductor Product Specification Silicon NPN Power Transistors 2N6496 PACKAGE OUTLINE Fig.2 outline dimensions (unindicated tolerance:±0.10mm) 3.
