Datasheet Details
| Part number | 2N6496 |
|---|---|
| Manufacturer | SavantIC |
| File Size | 137.99 KB |
| Description | Silicon Power Transistor |
| Datasheet | 2N6496_SavantIC.pdf |
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Overview: SavantIC Semiconductor www.DataSheet4U.com Product Specification Silicon NPN Power Transistors.
| Part number | 2N6496 |
|---|---|
| Manufacturer | SavantIC |
| File Size | 137.99 KB |
| Description | Silicon Power Transistor |
| Datasheet | 2N6496_SavantIC.pdf |
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·With TO-3 package ·High collector current rating ·High power dissipation capability ·Wide area of safe operation APPLICATIONS ·For switching and amplifier circuits in Industrial and commercial applications PINNING PIN 1 2 3 Base Emitter Collector Fig.1 simplified outline (TO-3) and symbol DESCRIPTION Absolute maximum ratings(Ta= ) SYMBOL VCBO VCEO VEBO IC IB PD Tj Tstg PARAMETER Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Base current Total Power Dissipation Junction temperature Storage temperature TC=25 CONDITIONS Open emitter Open base Open collector VALUE 150 110 7 15 5 140 150 -65~200 UNIT V V V A A W THERMAL CHARACTERISTICS SYMBOL Rth j-c PARAMETER Thermal resistance junction to case VALUE 1.25 UNIT /W SavantIC Semiconductor www.DataSheet4U.com Product Specification Silicon NPN Power Transistors 2N6496 CHARACTERISTICS Tj=25 unless otherwise specified PARAMETER CONDITIONS MIN TYP.
MAX UNIT SYMBOL VCEO(SUS) Collector-emitter sustaining voltage IC=0.2A ;IB=0 80 V V(BR)EBO Emitter-base breakdown voltage IE=50mA ;IC=0 7 V VCEsat Collector-emitter saturation voltge IC=8A ;IB=0.8A 1.0 V VBEsat Base-emitter saturation voltage IC=8A ;IB=0.8A 2.0 V VBE Base-emitter on voltage IC=8A ;
VCE=2V 1.8 V ICEO Collector cut-off current VCE=90V;
| Brand Logo | Part Number | Description | Manufacturer |
|---|---|---|---|
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