2N6493 Overview
Product Specification Silicon NPN Power Transistors 2N6493 CHARACTERISTICS Tm=25 unless otherwise specified PARAMETER CONDITIONS MIN TYP. MAX UNIT SYMBOL VCEO(SUS) Collector-emitter sustaining voltage IC=0.1 A ;IB=0 70 V VCEsat Collector-emitter saturation voltage IC=10A ;IB=100mA 3 V VBEsat Base-emitter saturation voltage IC=10A ;IB=100mA 4 V VBE Base-emitter on voltage IC=4A ; VCE=4V 2.8 V ICEO Collector cut-off...
