2N6495
DESCRIPTION
- With TO-66 package
- Low collector saturation voltage
- Excellent safe operating area APPLICATIONS
- Designed for switching and wideband amplifier applications
PINNING (See Fig.2) PIN 1 2 3 Base Emitter Collector Fig.1 simplified outline (TO-66) and symbol DESCRIPTION
Absolute maximum ratings(Ta=25 )
SYMBOL VCBO VCEO VEBO IC PT Tj Tstg PARAMETER Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Total power dissipation Junction temperature Storage temperature TC=25 CONDITIONS Open emitter Open base Open collector VALUE 150 80 7 10 70 150 -65~200 UNIT V V V A W
THERMAL CHARACTERISTICS
SYMBOL Rth j-C PARAMETER Thermal resistance junction to case MAX 4.37 UNIT /W
Savant IC Semiconductor
..
Product Specification
Silicon NPN Power Transistors
CHARACTERISTICS
Tj=25 unless otherwise specified PARAMETER CONDITIONS MIN
SYMBOL
TYP.
UNIT
VCEO(SUS) VCEsat VBEsat VBE ICEV ICEO IEBO h FE f T
Collector-emitter sustaining...
