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2N6499 Datasheet Silicon NPN Power Transistors

Manufacturer: SavantIC

Datasheet Details

Part number 2N6499
Manufacturer SavantIC
File Size 88.77 KB
Description Silicon NPN Power Transistors
Datasheet download datasheet 2N6499 Datasheet

General Description

·With TO-220C package ·High breakdown voltage APPLICATIONS ·Designed for high voltage inverters, switching regulators and line operated amplifier applications PINNING PIN 1 2 3 DESCRIPTION Base Collector;connected to mounting base Emitter Absolute maximum ratings(Ta=25 ) SYMBOL PARAMETER VCBO VCEO Collector-base voltage Collector-emitter voltage VEBO Emitter-base voltage IC Collector current (DC) ICM Collector current-Peak IB Base current PD Total power dissipation Tj Junction temperature Tstg Storage temperature CONDITIONS Open emitter Open base Open collector TC=25 THERMAL CHARACTERISTICS SYMBOL PARAMETER Rth j-c Thermal resistance from junction to case VALUE 450 350 6 5 10 2 80 150 -65~150 UNIT V V V A A A W VALUE 1.56 UNIT /W SavantIC Semiconductor Silicon NPN Power Transistors Product Specification 2N6499 CHARACTERISTICS Tj=25 unless otherwise specified SYMBOL PARAMETER CONDITIONS VCEO(SUS) Collector-emitter sustaining voltage IC=25mA ;IB=0 VCEsat-1 Collector-emitter saturation voltage IC=2.5A;

IB=0.5A VCEsat-2 Collector-emitter saturation voltage IC=5A ;IB=2A VBEsat-1 Base-emitter saturation voltage IC=2.5A;

IB=0.5A VBEsat-2 Base-emitter saturation voltage ICEX Collector cut-off current IEBO Emitter cut-off current IC=5A ;IB=2A VCE=450V;VBE=-1.5V VCE=225V;VBE=-1.5V;TC=100 VEB=6V;

Overview

SavantIC Semiconductor Silicon NPN Power Transistors Product.