Datasheet Details
| Part number | 2N6510 |
|---|---|
| Manufacturer | SavantIC |
| File Size | 136.64 KB |
| Description | Silicon Power Transistor |
| Datasheet |
 2N6510 Datasheet
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| Part number | 2N6510 |
|---|---|
| Manufacturer | SavantIC |
| File Size | 136.64 KB |
| Description | Silicon Power Transistor |
| Datasheet |
2N6510 Datasheet
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·With TO-3 package ·High breakdown voltage ·Low collector saturation voltage APPLICATIONS ·For use in switching power supply applications and other inductive switching circuits PINNING PIN 1 2 3 Base Emitter Collector Fig.1 simplified outline (TO-3) and symbol DESCRIPTION Absolute maximum ratings(Ta= ) SYMBOL VCBO VCEO VEBO IC ICM PD Tj Tstg PARAMETER Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Collector current-peak Total power dissipation Junction temperature Storage temperature TC=25 CONDITIONS Open emitter Open base Open collector VALUE 250 200 7 7 14 120 150 -65~200 UNIT V V V A A W THERMAL CHARACTERISTICS SYMBOL Rth j-c PARAMETER Thermal resistance junction to case VALUE 1.25 UNIT /W SavantIC Semiconductor www.DataSheet4U.com Product Specification Silicon NPN Power Transistors CHARACTERISTICS Tj=25 unless otherwise specified PARAMETER CONDITIONS MIN TYP.
2N6510 SYMBOL MAX UNIT VCEO(SUS) Collector-emitter sustaining voltage IC=0.1A ;IB=0 200 V VCEsat-1 Collector-emitter saturation voltage IC=3A;
IB=0.4A 1.0 V VCEsat-2 Collector-emitter saturation voltage IC=5A;
SavantIC Semiconductor www.DataSheet4U.com Product Specification Silicon NPN Power Transistors.
| Brand Logo | Part Number | Description | Manufacturer |
|---|---|---|---|
 |
2N6510 | Power Transistor | RCA |
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2N6510 | Bipolar NPN Device | Seme LAB |
| Part Number | Description |
|---|---|
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| 2N6531 | Silicon Power Transistor |
| 2N6532 | Silicon Power Transistor |
| 2N6533 | Silicon Power Transistor |
| 2N6534 | Silicon Power Transistor |