2N6510 Datasheet and Specifications PDF

The 2N6510 is a Silicon Power Transistor.

Key Specifications

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Part Number2N6510 Datasheet
ManufacturerSavantIC
Overview ·With TO-3 package ·High breakdown voltage ·Low collector saturation voltage APPLICATIONS ·For use in switching power supply applications and other inductive switching circuits PINNING PIN 1 2 3 Base . specified PARAMETER CONDITIONS MIN TYP. 2N6510 SYMBOL MAX UNIT VCEO(SUS) Collector-emitter sustaining voltage IC=0.1A ;IB=0 200 V VCEsat-1 Collector-emitter saturation voltage IC=3A; IB=0.4A 1.0 V VCEsat-2 Collector-emitter saturation voltage IC=5A; IB=1A 1.0 V VBEsat Base-emitt.
Part Number2N6510 Datasheet
DescriptionBipolar NPN Device
ManufacturerSeme LAB
Overview 2N6510 Dimensions in mm (inches). 25.15 (0.99) 26.67 (1.05) 10.67 (0.42) 11.18 (0.44) 1.52 (0.06) 3.43 (0.135) 6.35 (0.25) 9.15 (0.36) Bipolar NPN Device in a Hermetically sea. onditions, parameter limits and package dimensions without notice. Information furnished by Semelab is believed to be both accurate and reliable at the time of going to press. However Semelab assumes no responsibility for any errors or omissions discovered in its use. DataSheet4U.com Semelab plc. .
Part Number2N6510 Datasheet
DescriptionPower Transistor
ManufacturerRCA
Overview File No.. 848 _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ __ [ID(J8LJD Solid State Division Power Transistors 2N6510-2N6514 High-Voltage, High-Current Silicon N-P-N Power-Switchin. a Fast switching speed 1:::1 Epitaxial pi-nu construction " Hermetic steel package-JEDEC TO-3 a Maximum.safe-area-of-operation curves a Thermal-cycling rating chart The RCA-2N6510. -2N6511, -2N6512, -2N6513, and -2N6514° are epitaxial silicon n-p-n power transistors with pi-nu construction. They a.

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