2N6510 Overview
Key Specifications
Description
With TO-3 package - High breakdown voltage - Low collector saturation voltage APPLICATIONS - For use in switching power supply applications and other inductive switching circuits PINNING PIN 1 2 3 Base Emitter Collector Fig.1 simplified outline (TO-3) and symbol DESCRIPTION SYMBOL VCBO VCEO VEBO IC ICM PD Tj Tstg PARAMETER Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Collector current-peak Total power dissipation Junction temperature Storage temperature TC=25 CONDITIONS Open emitter Open base Open collector VALUE 250 200 7 7 14 120 150 -65~200 UNIT V V V A A W SYMBOL Rth j-c PARAMETER SavantIC Semiconductor Product Specification Silicon NPN Power Transistors CHARACTERISTICS Tj=25 unless otherwise specified PARAMETER CONDITIONS MIN TYP. 2N6510 SYMBOL MAX UNIT VCEO(SUS) Collector-emitter sustaining voltage IC=0.1A ;IB=0 200 V VCEsat-1 Collector-emitter saturation voltage IC=3A; IB=0.4A 1.0 V VCEsat-2 Collector-emitter saturation voltage IC=5A; IB=1A 1.0 V VBEsat Base-emitter saturation voltage IC=5A; IB=1A VCE=250V; VBE(off)=-1.5V TC=100 VEB=7V; IC=0 1.5 0.1 1.5 0.1 V ICES Collector cut-off current mA IEBO Emitter cut-off current mA hFE DC current gain IC=4A ; VCE=3V 10 50 fT Transition frequency IC=0.5A ; VCE=10V 3 MHz 2 SavantIC Semiconductor Product Specification Silicon NPN Power Transistors PACKAGE OUTLINE 2N6510 Fig.2 outline dimensions (unindicated tolerance:±0.1mm) 3.
