Datasheet Details
| Part number | 2SA1120 |
|---|---|
| Manufacturer | SavantIC |
| File Size | 126.63 KB |
| Description | SILICON POWER TRANSISTOR |
| Datasheet |
 2SA1120 Datasheet
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| Part number | 2SA1120 |
|---|---|
| Manufacturer | SavantIC |
| File Size | 126.63 KB |
| Description | SILICON POWER TRANSISTOR |
| Datasheet |
2SA1120 Datasheet
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·With TO-126 package ·High transition frequency ·Low collector saturation voltage APPLICATIONS ·Audio power amplifier applications PINNING PIN 1 2 3 DESCRIPTION Emitter Collector;connected to mounting base Base Absolute maximum ratings(Ta=25 ) SYMBOL VCBO VCEO VEBO IC IB PARAMETER Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Base current Ta=25 PD Total power dissipation TC=25 Tj Tstg Junction temperature Storage temperature 5 150 -55 +150 CONDITIONS Open emitter Open base Open collector VALUE -35 -35 -6 -5 -1 1.5 W UNIT V V V A A SavantIC Semiconductor www.DataSheet4U.com Product Specification Silicon PNP Power Transistors CHARACTERISTICS Tj=25 unless otherwise specified PARAMETER CONDITIONS MIN 2SA1120 SYMBOL TYP.
MAX UNIT V(BR)CEO Collector-emitter breakdown voltage IC=-10mA ;IB=0 -35 V VCEsat Collector-emitter saturation voltage IC=-4A;
IB=-0.1A -1.0 V VBE Base-emitter on voltage IC=-4A ;
SavantIC Semiconductor www.DataSheet4U.com Product Specification Silicon PNP Power Transistors.
| Brand Logo | Part Number | Description | Manufacturer |
|---|---|---|---|
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2SA1120 | Silicon PNP Transistor | Toshiba |
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2SA1120 | POWER TRANSISTOR | Inchange Semiconductor |
| Part Number | Description |
|---|---|
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| 2SA1104 | SILICON POWER TRANSISTOR |
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| 2SA1106 | SILICON POWER TRANSISTOR |
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| 2SA1108 | SILICON POWER TRANSISTOR |
| 2SA1109 | SILICON POWER TRANSISTOR |