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SavantIC

2SA1180 Datasheet Preview

2SA1180 Datasheet

SILICON POWER TRANSISTOR

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SavantIC Semiconductor
wSwiwl.iDcatoaSnheePt4NU.cPomPower Transistors
Product Specification
2SA1180
DESCRIPTION
·With TO-3 package
·High power dissipations
APPLICATIONS
·For power switching amplifier and
general purpose applications
PINNING(see Fig.2)
PIN DESCRIPTION
1 Base
2 Emitter
3 Collector
Fig.1 simplified outline (TO-3) and symbol
Absolute maximum ratings(Ta= )
SYMBOL
PARAMETER
VCBO
VCEO
Collector-base voltage
Collector-emitter voltage
VEBO
Emitter-base voltage
IC Collector current
IB Base current
PC Collector power dissipation
Tj Junction temperature
Tstg Storage temperature
CONDITIONS
Open emitter
Open base
Open collector
TC=25
VALUE
-180
-180
-6
-10
-4
100
150
-55~150
UNIT
V
V
V
A
A
W




SavantIC

2SA1180 Datasheet Preview

2SA1180 Datasheet

SILICON POWER TRANSISTOR

No Preview Available !

SavantIC Semiconductor
Silicon PNP Power Transistors
www.DataSheet4U.com
CHARACTERISTICS
Tj=25 unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
V(BR)CEO Collector-emitter breakdown voltage IC=-25mA ;IB=0
V(BR)CBO Collector-base breakdown voltage IC=-1mA ;IE=0
V(BR)EBO Emitter-base breakdown voltage
IE=-1mA ;IC=0
VCEsat Collector-emitter saturation voltage IC=-5A; IB=-0.5A
VBEsat
Base-emitter saturation voltage
IC=-5A; IB=-0.5A
ICBO Collector cut-off current
VCB=-180V; IE=0
IEBO Emitter cut-off current
VEB=-6V; IC=0
hFE DC current gain
IC=-5A ; VCE=-4V
Product Specification
2SA1180
MIN TYP. MAX UNIT
-180
V
-180
V
-6 V
-2.0 V
-2.5 V
-0.1 mA
-0.1 mA
30
2


Part Number 2SA1180
Description SILICON POWER TRANSISTOR
Maker SavantIC
Total Page 3 Pages
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