2SA663 Overview
Description
With TO-3 package - Wide area of safe operation - Complement to type 2SC793 APPLICATIONS - For radio frequency,audio frequency and power amplifier applications PINNING(see Fig.2) PIN 1 2 3 Base Emitter Collector Fig.1 simplified outline (TO-3) and symbol DESCRIPTION SYMBOL VCBO VCEO VEBO IC PC Tj Tstg PARAMETER Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Collector power dissipation Junction temperature Storage temperature TC=25 Open emitter Open base Open collector CONDITIONS VALUE -100 -100 -5 -7 60 150 -55~150 UNIT V V V A W SavantIC Semiconductor Product Specification Silicon PNP Power Transistors CHARACTERISTICS Tj=25 unless otherwise specified PARAMETER CONDITIONS MIN TYP. 2SA663 SYMBOL MAX UNIT V(BR)CEO V(BR)CBO V(BR)EBO VCEsat VBEsat ICBO IEBO hFE fT Collector-emitter breakdown voltage IC=-25mA ;IB=0 IC=-1mA ;IE=0 IE=-1mA ;IC=0 IC=-4A; IB=-0.4A IC=-4A; IB=-0.4A VCB=-100V; IE=0 VEB=-5V; IC=0 IC=-1A ; VCE=-5V IC=-1A ; VCE=-5V -100 V Collector-base breakdown voltage -100 V Emitter-base breakdown voltage -5 V Collector-emitter saturation voltage -2.0 V Base-emitter saturation voltage -2.5 V Collector cut-off current -0.1 mA Emitter cut-off current -0.1 mA DC current gain 30 200 Transition frequency 6 MHz 2 SavantIC Semiconductor Product Specification Silicon PNP Power Transistors PACKAGE OUTLINE 2SA663 Fig.2 outline dimensions (unindicated tolerance:±0.1mm) 3.
