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SavantIC

2SA885 Datasheet Preview

2SA885 Datasheet

Silicon POwer Transistors

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SavantIC Semiconductor
Silicon PNP Power Transistors
www.DataSheet4U.com
DESCRIPTION
·With TO-126 package
·Complement to type 2SC1846
·Low collector-emitter saturation voltage
APPLICATIONS
·For low-frequency power amplification
PINNING
PIN
1
2
3
DESCRIPTION
Emitter
Collector;connected to
mounting base
Base
Product Specification
2SA885
Absolute Maximun Ratings (Ta=25 )
SYMBOL
PARAMETER
VCBO
Collector-base voltage
VCEO
Collector-emitter voltage
VEBO
Emitter-base voltage
IC Collector current (DC)
ICM Collector current-peak
CONDITIONS
Open emitter
Open base
Open collector
PC Collector power dissipation
TC=25
Tj Junction temperature
Tstg Storage temperature
Note) *1: Without heat sink
*2: With a 100 × 100 × 2 mm A1 heat sink
VALUE
-45
-35
-5
-1
-1.5
1.2*1
5*2
150
-55~150
UNIT
V
V
V
A
A
W




SavantIC

2SA885 Datasheet Preview

2SA885 Datasheet

Silicon POwer Transistors

No Preview Available !

SavantIC Semiconductor
Silicon PNP Power Transistors
www.DataSheet4U.com
Product Specification
2SA885
CHARACTERISTICS
Tj=25 unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
V(BR)CEO Collector-emitter breakdown voltage IC=-2mA;IB=0
V(BR)CBO Collector-base breakdown voltage IC=-10µA ;IE=0
VCEsat Collector-emitter saturation voltage IC=-0.5A ;IB=-50mA
ICBO Collector cut-off current
VCB=-20V; IE=0
ICEO Collector cut-off current
VCE=-20V; IB=0
IEBO Emitter cut-off current
VEB=-5V; IC=0
hFE-1
DC current gain
IC=-0.5A ; VCE=-10V
hFE-2
DC current gain
IC=-1A ; VCE=-5V
COB Output capacitance
IE=0 ; VCB=-10V;f=1MHz
fT Transition frequency
IC=50mA ; VCB=-10V,f=200MHz
MIN TYP. MAX UNIT
-35 V
-45 V
-0.5 V
-0.1 µA
-100 µA
-10 µA
85 340
50
20 30 pF
200 MHz
hFE-1 Classifications
QRS
85-170 120-240 170-340
2


Part Number 2SA885
Description Silicon POwer Transistors
Maker SavantIC
PDF Download

2SA885 Datasheet PDF






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