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SavantIC

2SA913 Datasheet Preview

2SA913 Datasheet

Silicon POwer Transistors

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SavantIC Semiconductor
Silicon PNP Power Transistors
www.DataSheet4U.com
DESCRIPTION
·With TO-220 package
·Complement to type 2SC1913/1913A
·Large collector power dissipation
·High VCEO
APPLICATIONS
·Audio frequency high power driver
PINNING
PIN
1
2
3
DESCRIPTION
Emitter
Collector;connected to
mounting base
Base
Product Specification
2SA913 2SA913A
Fig.1 simplified outline (TO-220) and symbol
Absolute maximum ratings(Ta=25 )
SYMBOL
PARAMETER
CONDITIONS
VCBO
Collector-base voltage
2SA913
2SA913A
Open emitter
VCEO
Collector-emitter voltage
2SA913
2SA913A
Open base
VEBO
IC
ICM
PC
Tj
Tstg
Emitter-base voltage
Collector current
Collector current-peak
Collector power dissipation
Junction temperature
Storage temperature
Open collector
TC=25
VALUE
-150
-180
-150
-180
-5
-1
-1.5
15
150
-55~150
UNIT
V
V
V
A
A
W




SavantIC

2SA913 Datasheet Preview

2SA913 Datasheet

Silicon POwer Transistors

No Preview Available !

SavantIC Semiconductor
Silicon PNP Power Transistors
www.DataSheet4U.com
CHARACTERISTICS
Tj=25 unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
V(BR)CEO
Collector-emitter
breakdown voltage
2SA913
2SA913A
IC=-0.1mA ,IB=0
V(BR)EBO Emitter-base breakdown voltage IE=-10µA ,IC=0
VCEsat
Collector-emitter
saturation voltage
2SA913 IC=-0.5A; IB=-50mA
2SA913A IC=-0.3A; IB=-30mA
VBEsat
Base-emitter
saturation voltage
2SA913 IC=-0.5A; IB=-50mA
2SA913A IC=-0.3A; IB=-30mA
ICBO Collector cut-off current
VCB=-120V; IE=0
IEBO Emitter cut-off current
VEB=-4V; IC=0
hFE-1
DC current gain
IC=-150mA ; VCE=-10V
hFE-2
DC current gain
IC=-500mA ; VCE=-5V
COB Output capacitance
IE=0 ;VCB=-100V;f=1MHz
fT Transition frequency
IC=50mA ; VCE=-10V
hFE-1 Classifications
PQR
S
65-110 90-155 130-220 185-330
Product Specification
2SA913 2SA913A
MIN TYP. MAX UNIT
-150
-180
V
-5 V
-1.0
V
-1.5
-1.5 V
-1 µA
-1 µA
65 330
50
15 pF
120 MHz
2


Part Number 2SA913
Description Silicon POwer Transistors
Maker SavantIC
PDF Download

2SA913 Datasheet PDF






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