Datasheet Details
| Part number | 2SA914 |
|---|---|
| Manufacturer | Inchange Semiconductor |
| File Size | 146.14 KB |
| Description | POWER TRANSISTOR |
| Datasheet | 2SA914_InchangeSemiconductor.pdf |
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Overview: www.DataSheet4U.net Inchange Semiconductor Product Specification Silicon PNP Power Transistors.
| Part number | 2SA914 |
|---|---|
| Manufacturer | Inchange Semiconductor |
| File Size | 146.14 KB |
| Description | POWER TRANSISTOR |
| Datasheet | 2SA914_InchangeSemiconductor.pdf |
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·With TO-126 package ·Complement to type 2SC1953 ·Good linearity of hFE ·High VCEO APPLICATIONS ·For audio frequency power pre-amplifier PINNING PIN 1 2 3 DESCRIPTION Emitter Collector;connected to mounting base Base · Absolute Maximun Ratings (Ta=25℃) SYMBOL VCBO VCEO VEBO IC ICM PC Tj Tstg PARAMETER Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Collector current-Peak Collector power dissipation Junction temperature Storage temperature CONDITIONS Open emitter Open base Open collector VALUE -150 -150 -5 -50 -100 1 150 -55~150 UNIT V V V mA mA W ℃ ℃ Inchange Semiconductor Product Specification Silicon PNP Power Transistors CHARACTERISTICS Tj=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN 2SA914 TYP.
MAX UNIT V(BR)CEO Collector-emitter breakdown voltage IC=-0.1mA;IB=0 IE=-10μA ;IC=0 IC=-30mA ;IB=-3mA -150 V V(BR)EBO VCEsat Emitter-base breakdown voltage -5 V Collector-emitter saturation voltage -1.0 V μA μA ICBO Collector cut-off current VCB=-100V;
IE=0 -1 IEBO Emitter cut-off current VEB=-5V;
| Brand Logo | Part Number | Description | Manufacturer |
|---|---|---|---|
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2SA914 | SI PNP EPITAXIAL PLANAR TRANSISTOR | Panasonic Semiconductor |
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2SA914 | Silicon POwer Transistors | SavantIC |
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| 2SA908 | POWER TRANSISTOR |
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| 2SA940 | Silicon PNP Power Transistor |
| 2SA957 | POWER TRANSISTOR |
| 2SA958 | POWER TRANSISTOR |
| 2SA959 | POWER TRANSISTOR |
| 2SA963 | POWER TRANSISTOR |