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2SA913A Datasheet Power Transistor

Manufacturer: Inchange Semiconductor

Overview: www.DataSheet4U.net Inchange Semiconductor Product Specification Silicon PNP Power Transistors 2SA913.

General Description

·With TO-220 package ·Complement to type 2SC1913/1913A ·Large collector power dissipation ·High VCEO APPLICATIONS ·Audio frequency high power driver PINNING PIN 1 2 3 DESCRIPTION Emitter Collector;connected to mounting base Base Fig.1 simplified outline (TO-220) and symbol Absolute maximum ratings(Ta=25℃) SYMBOL PARAMETER 2SA913 VCBO Collector-base voltage 2SA913A 2SA913 VCEO Collector-emitter voltage 2SA913A VEBO IC ICM PC Tj Tstg Emitter-base voltage Collector current Collector current-peak Collector power dissipation Junction temperature Storage temperature TC=25℃ Open collector Open base -180 -5 -1 -1.5 15 150 -55~150 V A A W ℃ ℃ Open emitter -180 -150 V CONDITIONS VALUE -150 V UNIT Inchange Semiconductor Product Specification Silicon PNP Power Transistors CHARACTERISTICS Tj=25℃ unless otherwise specified SYMBOL PARAMETER 2SA913 IC=-0.1mA ,IB=0 B 2SA913 2SA913A CONDITIONS MIN -150 TYP.

MAX UNIT V(BR)CEO Collector-emitter breakdown voltage V -180 2SA913A IE=-10μA ,IC=0 IC=-0.5A;

IB=-50mA IC=-0.3A;

2SA913A Distributor