Datasheet Details
| Part number | 2SA913 |
|---|---|
| Manufacturer | Inchange Semiconductor |
| File Size | 205.09 KB |
| Description | POWER TRANSISTOR |
| Datasheet | 2SA913_InchangeSemiconductor.pdf |
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Overview: isc Silicon PNP Power Transistor 2SA913.
| Part number | 2SA913 |
|---|---|
| Manufacturer | Inchange Semiconductor |
| File Size | 205.09 KB |
| Description | POWER TRANSISTOR |
| Datasheet | 2SA913_InchangeSemiconductor.pdf |
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·Collector-Emitter Breakdown Voltage : V(BR)CEO= -150V(Min) ·plement to Type 2SC1913 ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for AF high power dirver applications.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage -150 V VCEO Collector-Emitter Voltage -150 V VEBO Emitter-Base Voltage -5 V IC Collector Current-Continuous -1 A ICM Collector Current-Peak PC Total Power Dissipation @ TC=25℃ TJ Junction Temperature -1.5 A 15 W 150 ℃ Tstg Storage Temperature Range -55~150 ℃ isc website：.iscsemi.
1 isc & iscsemi is registered trademark isc Silicon PNP Power Transistor ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS V(BR)CEO Collector-Emitter Breakdown Voltage IC= -0.1mA;
| Brand Logo | Part Number | Description | Manufacturer |
|---|---|---|---|
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2SA913 | PNP Transistor | Panasonic Semiconductor |
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2SA913 | Silicon POwer Transistors | SavantIC |
|
2SA913A | PNP Transistor | Panasonic Semiconductor |
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2SA913A | Silicon POwer Transistors | SavantIC |
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