Datasheet Details
| Part number | 2SB600 |
|---|---|
| Manufacturer | SavantIC |
| File Size | 135.31 KB |
| Description | SILICON POWER TRANSISTOR |
| Datasheet |
 2SB600 Datasheet
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| Part number | 2SB600 |
|---|---|
| Manufacturer | SavantIC |
| File Size | 135.31 KB |
| Description | SILICON POWER TRANSISTOR |
| Datasheet |
2SB600 Datasheet
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·With TO-3 package ·High power dissipations ·Complement to type 2SD555 APPLICATIONS ·For use in audio and power amplifier applications PINNING(see Fig.2) PIN 1 2 3 Base Emitter Collector Fig.1 simplified outline (TO-3) and symbol DESCRIPTION Absolute maximum ratings(Ta= ) SYMBOL VCBO VCEO VEBO IC PC Tj Tstg PARAMETER Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Collector power dissipation Junction temperature Storage temperature TC=25 CONDITIONS Open emitter Open base Open collector VALUE -200 -200 -5 -10 200 150 -55~200 UNIT V V V A W SavantIC Semiconductor www.DataSheet4U.com Product Specification Silicon PNP Power Transistors CHARACTERISTICS Tj=25 unless otherwise specified PARAMETER CONDITIONS MIN TYP.
2SB600 SYMBOL MAX UNIT V(BR)CEO Collector-emitter breakdown voltage IC=-25mA ;IB=0 -200 V V(BR)EBO Emitter-base breakdown voltage IE=-1mA ;IC=0 -5 V VCEsat Collector-emitter saturation voltage IC=-10A;
IB=-1A -1.5 V VBEsat Base-emitter saturation voltage IC=-10A;
SavantIC Semiconductor www.DataSheet4U.com Product Specification Silicon PNP Power Transistors.
| Brand Logo | Part Number | Description | Manufacturer |
|---|---|---|---|
 |
2SB600 | PNP Transistor | INCHANGE |
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