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2SB601 - SILICON POWER TRANSISTOR

Datasheet Details

Part number 2SB601
Manufacturer SavantIC
File Size 144.28 KB
Description SILICON POWER TRANSISTOR
Datasheet download datasheet 2SB601 Datasheet

General Description

·With TO-220C package ·DARLINGTON ·High DC current gain ·Low collector saturation voltage APPLICATIONS ·For low-frequency power amplifier and low-speed switching applications PINNING PIN 1 2 3 Base Collector;connected to mounting base Emitter DESCRIPTION 2SB601 Absolute maximum ratings(Tc=25 ) SYMBOL VCBO VCEO VEBO IC ICM IB PARAMETER Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current-DC Collector current-Pulse Base current-DC TC=25 PT Total power dissipation Ta=25 Tj Tstg Junction temperature Storage temperature 1.5 150 -55~150 Open emitter Open base Open collector CONDITIONS VALUE -100 -100 -7 -5 -8 -0.5 30 W UNIT V V V A A A SavantIC Semiconductor www.DataSheet4U.com Product Specification Silicon PNP Power Transistors CHARACTERISTICS Tj=25 unless otherwise specified PARAMETER Collector-emitter sustaining voltage Collector-emitter saturation voltage Base-emitter saturation voltage Collector cut-off current Collector cut-off current Emitter cut-off current DC current gain DC current gain Output capacitance CONDITIONS IC=-3A, IB1=-3mA,L=1mH IC=-3A ,IB=-3mA IC=-3A ,IB=-3mA VCB=-100V, IE=0 VCE=-100V, VBE=-1.5V Ta=25 VEB=-5V;

IC=0 IC=-3A ;

VCE=-2V IC=-5A ;

Overview

SavantIC Semiconductor www.DataSheet4U.com Product Specification Silicon PNP Power.