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2SB601 - PNP Transistor

General Description

High DC Current Gain- : hFE = 2000(Min)@ IC= -3A Collector-Emitter Sustaining Voltage- : VCEO(SUS) = -100V(Min) Low Collector-Emitter Saturation Voltage- : VCE(sat) = -1.5V(Max)@ IC= -3A Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIO

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isc Silicon PNP Darlington Power Transistor 2SB601 DESCRIPTION ·High DC Current Gain- : hFE = 2000(Min)@ IC= -3A ·Collector-Emitter Sustaining Voltage- : VCEO(SUS) = -100V(Min) ·Low Collector-Emitter Saturation Voltage- : VCE(sat) = -1.5V(Max)@ IC= -3A ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for use in low-frequency power amplifiers and low- speed switching applications. ·Ideal for use in direct drive from IC output for magnet drivers such as terminal equipment or cash registers.