2SB601
2SB601 is PNP Transistor manufactured by Inchange Semiconductor.
DESCRIPTION
- High DC Current Gain-
: h FE = 2000(Min)@ IC= -3A
- Collector-Emitter Sustaining Voltage-
: VCEO(SUS) = -100V(Min)
- Low Collector-Emitter Saturation Voltage-
: VCE(sat) = -1.5V(Max)@ IC= -3A
- Minimum Lot-to-Lot variations for robust device performance and reliable operation
APPLICATIONS
- Designed for use in low-frequency power amplifiers and low- speed switching applications.
- Ideal for use in direct drive from IC output for magnet drivers such as terminal equipment or cash registers.
ABSOLUTE MAXIMUM RATINGS (Ta=25℃)
SYMBOL
PARAMETER
VALUE
UNIT
VCBO
Collector-Base Voltage
-100
VCEO
Collector-Emitter Voltage
-100
VEBO
Emitter-Base Voltage
-7
Collector Current-Continuous
-5
Collector Current-Peak
-8
Base Current-DC
Collector Power Dissipation TC=25℃ PC Collector Power Dissipation...
