Datasheet4U Logo Datasheet4U.com

2SB601 - SILICON POWER TRANSISTOR

General Description

With TO-220C package DARLINGTON High DC current gain Low collector saturation voltage APPLICATIONS For low-frequency power amplifier and low-speed switching applications PINNING PIN 1 2 3 Base Collector;connected to mounting base Emitter DESCRIPTION 2SB601 Absolute maximum

📥 Download Datasheet

Datasheet Details

Part number 2SB601
Manufacturer SavantIC
File Size 144.28 KB
Description SILICON POWER TRANSISTOR
Datasheet download datasheet 2SB601 Datasheet

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
SavantIC Semiconductor www.DataSheet4U.com Product Specification Silicon PNP Power Transistors DESCRIPTION ·With TO-220C package ·DARLINGTON ·High DC current gain ·Low collector saturation voltage APPLICATIONS ·For low-frequency power amplifier and low-speed switching applications PINNING PIN 1 2 3 Base Collector;connected to mounting base Emitter DESCRIPTION 2SB601 Absolute maximum ratings(Tc=25 ) SYMBOL VCBO VCEO VEBO IC ICM IB PARAMETER Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current-DC Collector current-Pulse Base current-DC TC=25 PT Total power dissipation Ta=25 Tj Tstg Junction temperature Storage temperature 1.5 150 -55~150 Open emitter Open base Open collector CONDITIONS VALUE -100 -100 -7 -5 -8 -0.