With TO-220C package
DARLINGTON
High DC current gain
Low collector saturation voltage APPLICATIONS
For low-frequency power amplifier and low-speed switching applications
PINNING PIN 1 2 3 Base Collector;connected to mounting base Emitter DESCRIPTION
2SB601
Absolute maximum
The following content is an automatically extracted verbatim text
from the original manufacturer datasheet and is provided for reference purposes only.
View original datasheet text
SavantIC Semiconductor
www.DataSheet4U.com
Product Specification
Silicon PNP Power Transistors
DESCRIPTION ·With TO-220C package ·DARLINGTON ·High DC current gain ·Low collector saturation voltage APPLICATIONS ·For low-frequency power amplifier and low-speed switching applications
PINNING PIN 1 2 3 Base Collector;connected to mounting base Emitter DESCRIPTION
2SB601
Absolute maximum ratings(Tc=25 )
SYMBOL VCBO VCEO VEBO IC ICM IB PARAMETER Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current-DC Collector current-Pulse Base current-DC TC=25 PT Total power dissipation Ta=25 Tj Tstg Junction temperature Storage temperature 1.5 150 -55~150 Open emitter Open base Open collector CONDITIONS VALUE -100 -100 -7 -5 -8 -0.