2SB645 Description
Product Specification Silicon PNP Power Transistors 2SB645 CHARACTERISTICS Tj=25 unless otherwise specified PARAMETER Collector-emitter breakdown voltage Emitter-base breakdown voltage Collector-emitter saturation voltage Collector cut-off current Emitter cut-off current DC current gain Transition frequency CONDITIONS IC=-50mA ;IB=0 IE=-1mA ;IC=0 IC=-10A; VCE=-10V 40 12 MIN -200 -5 -3.0 -0.1 -0.1 140 MHz TYP. MAX...