2SB656 Description
Product Specification Silicon PNP Power Transistors 2SB656 CHARACTERISTICS Tj=25 unless otherwise specified PARAMETER CONDITIONS MIN TYP. MAX UNIT SYMBOL V(BR)CEO Collector-emitter breakdown voltage IC=-50mA ;IB=0 -160 V V(BR)CBO Collector-base breakdown voltage IC=-1mA ;IE=0 -160 V V(BR)EBO Emitter-base breakdown voltage IE=-1mA ;IC=0 -5 V VCEsat Collector-emitter saturation voltage IC=-10A; IB=-1A -3.0 V ICBO...