Datasheet Details
| Part number | 2SB656 |
|---|---|
| Manufacturer | Inchange Semiconductor |
| File Size | 207.18 KB |
| Description | PNP Transistor |
| Datasheet | 2SB656-INCHANGE.pdf |
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Overview: isc Silicon PNP Power Transistors 2SB656.
| Part number | 2SB656 |
|---|---|
| Manufacturer | Inchange Semiconductor |
| File Size | 207.18 KB |
| Description | PNP Transistor |
| Datasheet | 2SB656-INCHANGE.pdf |
|
|
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·Collector-Emitter Breakdown Voltage- : V(BR)CEO= -160V(Min) ·High Power Dissipation- : PC= 125W(Max)@TC=25℃ ·Complement to Type 2SD676 ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for low frequency power amplifier applications.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage -160 V VCEO Collector-Emitter Voltage -160 V VEBO Emitter-Base Voltage -5 V IC Collector Current-Continuous -12 A ICM Collector Current-Peak PC Collector Power Dissipation @TC=25℃ TJ Junction Temperature -20 A 125 W 150 ℃ Tstg Storage Temperature -55~150 ℃ isc website：www.iscsemi.com 1 isc & iscsemi is registered trademark isc Silicon PNP Power Transistors ELECTRICAL CHARACTERISTICS Tj=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS V(BR)CEO Collector-Emitter Breakdown Voltage IC= -50mA;
RBE= ∞ V(BR)EBO Emitter-Base Breakdown Voltage IE= -5mA;
| Brand Logo | Part Number | Description | Manufacturer |
|---|---|---|---|
 |
2SB656 | SILICON POWER TRANSISTOR | SavantIC |
| Part Number | Description |
|---|---|
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