With TO-3 package
High power dissipation APPLICATIONS
For use in power amplifier applications
PINNING(see Fig.2) PIN 1 2 3 Base Emitter Collector Fig.1 simplified outline (TO-3) and symbol DESCRIPTION
Absolute maximum ratings(Ta= )
SYMBOL VCBO VCEO VEBO IC IB PC Tj Tstg PARAMETER Col
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SavantIC Semiconductor
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Product Specification
Silicon PNP Power Transistors
2SB656
DESCRIPTION ·With TO-3 package ·High power dissipation APPLICATIONS ·For use in power amplifier applications
PINNING(see Fig.2) PIN 1 2 3 Base Emitter Collector Fig.1 simplified outline (TO-3) and symbol DESCRIPTION
Absolute maximum ratings(Ta= )
SYMBOL VCBO VCEO VEBO IC IB PC Tj Tstg PARAMETER Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Base current Collector power dissipation Junction temperature Storage temperature TC=25 CONDITIONS Open emitter Open base Open collector VALUE -160 -160 -5 -12 -4 125 150 -55~150 UNIT V V V A A W
SavantIC Semiconductor
www.DataSheet4U.
2SB656 Datasheet
