2SB656 Datasheet | SavantIC

DESCRIPTION - With TO-3 package - High power dissipation APPLICATIONS - For use in power amplifier applications PINNING(see Fig.2) PIN 1 2 3 Base Emitter Collector Fig.1 simplified outline (TO-3) and symbol DESCRIPTION Absolute maximum ratings(Ta= ) SYMBOL VCBO VCEO VEBO IC IB PC Tj Tstg PARAMETER Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Base current Collector power dissipation Junction temperature Storage temperature TC=25 CONDITIONS Open emitter Open base Open collector VALUE -160 -160 -5 -12 -4 125 150 -55~150 UNIT V V V A A W Savant IC Semiconductor .. Product Specification Silicon PNP Power Transistors CHARACTERISTICS Tj=25 unless otherwise specified PARAMETER CONDITIONS MIN TYP. MAX UNIT SYMBOL V(BR)CEO Collector-emitter breakdown voltage IC=-50m A ;IB=0 -160 V(BR)CBO Collector-base breakdown voltage IC=-1m A ;IE=0 -160 V(BR)EBO Emitter-base breakdown voltage IE=-1m A ;IC=0 -5 VCEsat Collector-emitter saturation voltage IC=-10A;...