2SB689 Description
Product Specification Silicon PNP Power Transistors CHARACTERISTICS Tj=25 unless otherwise specified PARAMETER Collector-emitter breakdown voltage Emitter-base breakdown votage Collector-emitter saturation voltage Collector cut-off current Emitter cut-off current DC current gain DC current gain CONDITIONS IC=-10mA; IC=0 IC=-1A;IB=-0.1 A VCE=-80V; VCE=-4V 50 25 MIN -100 -4 2SB689 SYMBOL V(BR)CEO V(BR)EBO VCEsat ICEO...