2SB731 Description
Product Specification Silicon PNP Power Transistors CHARACTERISTICS Tj=25 unless otherwise specified PARAMETER Collector-emitter saturation voltage Base-emitter saturation voltage Collector cut-off current Emitter cut-off current DC current gain DC current gain Transition frequency Collector output capacitance CONDITIONS IC=-1.0A; VCB=-10V 135 40 MIN 2SB731 SYMBOL VCEsat VBEsat ICBO IEBO hFE-1 hFE-2 fT COB TYP....