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SavantIC
SavantIC

2SB870 Datasheet Preview

2SB870 Datasheet

SILICON POWER TRANSISTOR

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2SB870 pdf
SavantIC Semiconductor
Silicon PNP Power Transistors
www.DataSheet4U.com
DESCRIPTION
·With TO-220C package
·Complement to type 2SD866
·Low collector saturation voltage
·High collector current capability
APPLICATIONS
·For power switching applications
PINNING
PIN
1
2
3
DESCRIPTION
Emitter
Collector;connected to
mounting base
Base
Product Specification
2SB870
Fig.1 simplified outline (TO-220) and symbol
Absolute maximum ratings(Ta=25 )
SYMBOL
PARAMETER
VCBO
Collector-base voltage
VCEO
VEBO
Collector-emitter voltage
Emitter-base voltage
IC Collector current (DC)
ICM Collector current-Peak
PC Collector dissipation
Tj Junction temperature
Tstg Storage temperature
CONDITIONS
Open emitter
Open base
Open collector
TC=25
VALUE
-130
-80
-7
-7
-15
40
150
-50~150
UNIT
V
V
V
A
A
W



SavantIC
SavantIC

2SB870 Datasheet Preview

2SB870 Datasheet

SILICON POWER TRANSISTOR

No Preview Available !

2SB870 pdf
SavantIC Semiconductor
Silicon PNP Power Transistors
www.DataSheet4U.com
CHARACTERISTICS
Tj=25 unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
V(BR)CEO Collector-emitter breakdown voltage IC=-10mA; IB=0
VCEsat Collector-emitter saturation voltage IC=-5A; IB=-0.25A
VBEsat
Base-emitter saturation voltage
IC=-5A; IB=-0.25A
ICBO Collector cut-off current
VCB=-100V; IE=0
IEBO Emitter cut-off current
VEB=-5V; IC=0
hFE-1
DC current gain
IC=-0.1A ; VCE=-2V
hFE-2
DC current gain
IC=-3A ; VCE=-2V
fT Transition frequency
IC=-0.5A ; VCE=-10V
Switching times
ton Turn-on time
tstg Storage time
IC=-3A ; IB1=-IB2=-0.3A
tf Fall time
Product Specification
2SB870
MIN TYP. MAX UNIT
-80 V
-0.5 V
-1.5 V
-10 µA
-50 µA
45
60 260
30 MHz
0.1 µs
0.8 µs
0.1 µs
hFE-2 Classifications
RQ
P
60-120
90-180 130-260
2


Part Number 2SB870
Description SILICON POWER TRANSISTOR
Maker SavantIC
Total Page 3 Pages
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