Datasheet Details
| Part number | 2SB870 |
|---|---|
| Manufacturer | Inchange Semiconductor |
| File Size | 215.30 KB |
| Description | PNP Transistor |
| Datasheet |
 2SB870 Datasheet
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| Part number | 2SB870 |
|---|---|
| Manufacturer | Inchange Semiconductor |
| File Size | 215.30 KB |
| Description | PNP Transistor |
| Datasheet |
2SB870 Datasheet
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·Collector-Emitter Breakdown Voltage- : V(BR)CEO= -80V(Min) ·Good Linearity of hFE ·Low Collector Saturation Voltage : VCE(sat)= -0.5V(Max)@IC= -5A ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for power switching applications.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage -130 V VCEO Collector-Emitter Voltage -80 V VEBO Emitter-Base Voltage -7 V IC Collector Current-Continuous -7 A ICM Collector Current-Peak PC Collector Power Dissipation @ TC=25℃ TJ Junction Temperature -15 A 40 W 150 ℃ Tstg Storage Temperature Range -55~150 ℃ 2SB870 isc website：www.iscsemi.com 1 isc & iscsemi is registered trademark isc Silicon PNP Power Transistor ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS V(BR)CEO Collector-Emitter Breakdown Voltage IC= -10mA;
IB= 0 VCE(sat) Collector-Emitter Saturation Voltage IC= -5A;
isc Silicon PNP Power Transistor.
| Brand Logo | Part Number | Description | Manufacturer |
|---|---|---|---|
 |
2SB870 | SILICON POWER TRANSISTOR | SavantIC |
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