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2SB870 - PNP Transistor

Description

Collector-Emitter Breakdown Voltage- : V(BR)CEO= -80V(Min) Good Linearity of hFE Low Collector Saturation Voltage : VCE(sat)= -0.5V(Max)@IC= -5A Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for power switching appl

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isc Silicon PNP Power Transistor DESCRIPTION ·Collector-Emitter Breakdown Voltage- : V(BR)CEO= -80V(Min) ·Good Linearity of hFE ·Low Collector Saturation Voltage : VCE(sat)= -0.5V(Max)@IC= -5A ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for power switching applications. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage -130 V VCEO Collector-Emitter Voltage -80 V VEBO Emitter-Base Voltage -7 V IC Collector Current-Continuous -7 A ICM Collector Current-Peak PC Collector Power Dissipation @ TC=25℃ TJ Junction Temperature -15 A 40 W 150 ℃ Tstg Storage Temperature Range -55~150 ℃ 2SB870 isc website：www.iscsemi.
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