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2SB871 - PNP Transistor

Description

Collector-Emitter Breakdown Voltage- : V(BR)CEO= -20V(Min) High Speed Switching Low Collector Saturation Voltage : VCE(sat)= -0.6V(Max)@IC= -10A Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for low voltage switching

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isc Silicon PNP Power Transistor DESCRIPTION ·Collector-Emitter Breakdown Voltage- : V(BR)CEO= -20V(Min) ·High Speed Switching ·Low Collector Saturation Voltage : VCE(sat)= -0.6V(Max)@IC= -10A ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for low voltage switching applications. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage -40 V VCEO Collector-Emitter Voltage -20 V VEBO Emitter-Base Voltage -5 V IC Collector Current-Continuous -10 A ICM Collector Current-Peak PC Collector Power Dissipation @ TC=25℃ TJ Junction Temperature -20 A 40 W 150 ℃ Tstg Storage Temperature Range -55~150 ℃ 2SB871 isc website：www.iscsemi.
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