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2SB885 - SILICON POWER TRANSISTOR

Datasheet Details

Part number 2SB885
Manufacturer SavantIC
File Size 128.13 KB
Description SILICON POWER TRANSISTOR
Datasheet download datasheet 2SB885 Datasheet

General Description

·With TO-220C package ·DARLINGTON ·High DC durrent gain ·Low collector saturation voltage ·Complement to type 2SD1195 APPLICATIONS ·For motor drivers,printer hammer drivers,relay drivers,voltage regulator control applications PINNING PIN 1 2 3 Base Collector;connected to mounting base Emitter DESCRIPTION Absolute maximum ratings(Tc=25 ) SYMBOL VCBO VCEO VEBO IC ICM PARAMETER Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current-DC Collector current-Pulse TC=25 PC Collector power dissipation Ta=25 Tj Tstg Junction temperature Storage temperature 1.75 150 -55~150 Open emitter Open base Open collector CONDITIONS VALUE -110 -100 -6 -5 -8 35 W UNIT V V V A A SavantIC Semiconductor www.DataSheet4U.com Product Specification Silicon PNP Power Transistor CHARACTERISTICS Tj=25 unless otherwise specified PARAMETER Collector-emitter breakdown voltage Collector-base breakdown voltage Collector-emitter saturation voltage Base-emitter saturation voltage Collector cut-off current Emitter cut-off current DC current gain Transition frequency CONDITIONS IC=-50mA, RBE=?

IC=-5mA, IE=0 IC=-2.5A ,IB=-5mA IC=-2.5A ,IB=-5mA VCB=-80V, IE=0 VEB=-5V;

IC=0 IC=-2.5A ;

Overview

SavantIC Semiconductor www.DataSheet4U.com Product Specification Silicon PNP Power Transistor.