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2SB891F - SILICON POWER TRANSISTOR

Datasheet Details

Part number 2SB891F
Manufacturer SavantIC
File Size 132.43 KB
Description SILICON POWER TRANSISTOR
Datasheet download datasheet 2SB891F Datasheet

General Description

·With TO-126 package ·Complement to type 2SD1189F ·Low collector saturation voltage APPLICATIONS ·For low frequency power amplifier applications PINNING PIN 1 2 3 Emitter Collector;connected to mounting base Base DESCRIPTION Absolute maximum ratings(Ta=25 ) SYMBOL VCBO VCEO VEBO IC ICM PARAMETER Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current (DC) Collector current-Peak Ta=25 PC Collector power dissipation TC=25 Tj Tstg Junction temperature Storage temperature 5 150 -55~150 CONDITIONS Open emitter Open base Open collector VALUE -40 -32 -5 -2 -3 1.2 W UNIT V V V A A SavantIC Semiconductor www.DataSheet4U.com Product Specification Silicon PNP Power Transistors CHARACTERISTICS Tj=25 unless otherwise specified PARAMETER Collector-emitter breakdown voltage Collector-base breakdown voltage Emitter-base breakdown voltage Collector-emitter saturation voltage Collector cut-off current Emitter cut-off current DC current gain Transition frequency Collector output capacitance CONDITIONS IC=-1mA ;IB=0 IC=-50µA ;IE=0 IE=-50µA ;IC=0 IC=-2.0A;

IB=-0.2A VCB=-20V;

IE=0 VEB=-4V;

Overview

SavantIC Semiconductor www.DataSheet4U.com Product Specification Silicon PNP Power Transistors.