Description
With TO-3 package - High voltage ,high speed APPLICATIONS - For TV horizontal deflection output applications PINNING(see fig.2) PIN 1 2 3 Base Emitter Collector Fig.1 simplified outline (TO-3) and symbol DESCRIPTION SYMBOL VCBO VCEO VEBO IC PT Tj Tstg PARAMETER Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Total power dissipation Junction temperature Storage temperature TC=25 Open emitter Open base Open collector CONDITIONS VALUE 1500 500 5 5 50 150 -55~150 UNIT V V V A W SavantIC Semiconductor. Product Specification Silicon NPN Power Transistors CHARACTERISTICS Tj=25 unless otherwise specified PARAMETER Collector-emitter sustaining voltage Emitter-base breakdown votage Collector-emitter saturation voltage Base-emitter saturation voltage Collector cut-off current Emitter cut-off current DC current gain CONDITIONS IC=0.1A; IB=0 IE=1.0mA; IC=0 IC=5 A;IB=1.2 A IC=5 A;IB=1.2 A VCB=1500V;IE=0 VEB=5V; IC=0 IC=1A ; VCE=5V 8 MIN 500 5 2SC1413A SYMBOL VCEO(SUS) V(BR)EBO VCEsat VBEsat ICBO IEBO hFE TYP.
