High Collector-base breakdown voltage:1500V
Low saturation voltage@5A
Large area of safe operation
Minimum Lot-to-Lot variations for robust device
performance and reliable operation
APPLICATIONS
Designed for the horizontal output stage in
power-transformer-less television r
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INCHANGE Semiconductor
isc Silicon NPN Power Transistor
2SC1413A
DESCRIPTION ·High Collector-base breakdown voltage:1500V ·Low saturation voltage@5A ·Large area of safe operation ·Minimum Lot-to-Lot variations for robust device
performance and reliable operation
APPLICATIONS ·Designed for the horizontal output stage in
power-transformer-less television receivers.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE
UNIT
VCBO
Collector-Base Voltage
1500
V
VCEO
Collector-Emitter Voltage
500
V
VEBO
Emitter-Base Voltage
6
V
IC
Collector Current-Continuous
Collector Power Dissipation @ TC=25℃ PC Collector Power Dissipation
@ Ta=25℃
TJ
Junction Temperature
5
A
50 W
20
230
℃
Tstg
Storage Temperature Range
-45~150
℃
isc website：www.iscsemi.
2SC1413A Datasheet
