Download 2SC1418 Datasheet PDF
Inchange Semiconductor
2SC1418
DESCRIPTION - Low Collector Saturation Voltage - 100% avalanche tested - Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS - Power amplifier applications - Car radio,car stereo output stage amplifier applications. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage VCEO Collector-Emitter Voltage VEBO Emitter-Base Voltage Collector Current-Continuous Total Power Dissipation @ TC=25℃ Junction Temperature ℃ Tstg Storage Temperature Range -55~150 ℃ THERMAL CHARACTERISTICS SYMBOL PARAMETER Rth j-c Thermal Resistance, Junction to Case MAX 6.25 UNIT ℃/W isc website:.iscsemi. 1 isc & iscsemi is registered trademark isc Silicon NPN Power Transistor INCHANGE Semiconductor ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise...