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2SC2335 Datasheet SILICON POWER TRANSISTOR

Manufacturer: SavantIC

Overview: SavantIC Semiconductor www.DataSheet4U.com Product Specification Silicon NPN Power Transistors.

Datasheet Details

Part number 2SC2335
Manufacturer SavantIC
File Size 177.18 KB
Description SILICON POWER TRANSISTOR
Download 2SC2335 Download (PDF)

General Description

·With TO-220C package ·Collector-emitter sustaining voltage VCEO(sus)=400V(Min) ·Collector-emitter saturation voltage VCE(sat)=1.0V(Max.)@IC=3.0A,IB=0.6A ·Switching time-tf=1.0µs(Max.)@IC=3.0A APPLICATIONS ·Designed for use in high-voltage ,highspeed ,power switching in inductive circuit, particularly suited for 115 and 220V switchmode applications such as switching regulator’s ,inverters,,DC-DC and converter PINNING PIN 1 2 3 Base Collector;connected to mounting base Emitter DESCRIPTION Absolute maximum ratings(Ta=25 ) SYMBOL VCBO VCEO VEBO IC ICM IB PD Tj Tstg PARAMETER Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Collector current-peak Base current Total power dissipation Junction temperature Storage temperature TC=25 CONDITIONS Open emitter Open base Open collector VALUE 500 400 7 7 15 3.5 40 150 -50~150 UNIT V V V A A A W THERMAL CHARACTERISTICS SYMBOL Rth j-C PARAMETER Thermal resistance junction to case MAX 3.125 UNIT /W SavantIC Semiconductor www.DataSheet4U.com Product Specification Silicon NPN Power Transistors CHARACTERISTICS Tj=25 unless otherwise specified PARAMETER Collector-emitter sustaining voltage Collector-emitter saturation voltage Base-emitter saturation voltage Collector cut-off current Collector cut-off current Emitter cut-off current DC current gain DC current gain DC current gain CONDITIONS IC=3.0A ;

IB1=0.6A,L=1mH IC=3A;

IB=0.6A IC=3A;