SavantIC Semiconductor
Silicon NPN Power Transistors
www.DataSheet4U.com
CHARACTERISTICS
Tj=25 unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
V(BR)CEO Collector-emitter breakdown voltage IC=10mA ; IB=0
V(BR)CBO Collector-base breakdown voltage
IC=1mA; IE=0
V(BR)EBO Emitter-base breakdown voltage
IE=1mA; IC=0
VCEsat Collector-emitter saturation voltage IC=20A; IB=4A
VBEsat
Base-emitter saturation voltage
IC=20A; IB=4A
ICBO Collector cut-off current
VCB=500V; IE=0
IEBO Emitter cut-off current
VEB=5V; IC=0
hFE-1
DC current gain
IC=1A ; VCE=5V
hFE-2
DC current gain
IC=20A ; VCE=5V
fT Transition frequency
IC=4A ; VCE=10V
COB Collector output capacitance
IE=0 ; VCB=10V;f=1MHz
Product Specification
2SC3058
MIN TYP. MAX UNIT
400 V
600 V
7V
1.0 V
1.5 V
10 µA
10 µA
15 50
10 40
30 MHz
420 pF
2
