SavantIC Semiconductor
Silicon NPN Power Transistors
www.DataSheet4U.com
Product Specification
2SC3060
CHARACTERISTICS
Tj=25 unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
MIN TYP. MAX UNIT
V(BR)CEO Collector-emitter breakdown voltage IC=10mA ;RBE=>
V(BR)CBO Collector-base breakdown voltage
IC=1mA; IE=0
V(BR)EBO Emitter-base breakdown voltage
IE=1mA; IC=0
VCE(sat) Collector-emitter saturation voltage IC=2A; IB=0.4A
VBE(sat) Base-emitter saturation voltage
IC=2A; IB=0.4A
ICBO Collector cut-off current
VCB=1000V; IE=0
VCB=1000V; IE=0, TC=100
IEBO Emitter cut-off current
VEB=6V; IC=0
hFE DC current gain
IC=2A ; VCE=5V
fT Transition frequency
IC=0.5A ; VCE=10V
Cob Output capacitance
IE=0; VCB=10V,f=1MHz
Switching times
850 V
1200
V
7V
1.5 V
2.0 V
100 µA
1 mA
100 µA
10 30
15 MHz
120 pF
tr Rise time
tstg Storage time
tf Fall time
VCC=400V; IC=2A
IB1=0.2A;IB2=-0.6A;
0.5 µs
3.5 µs
0.3 µs
2
