2SC3857 Description
Product Specification Silicon NPN Power Transistors CHARACTERISTICS Tj=25 unless otherwise specified PARAMETER Collector-emitter breakdown voltage Collector-emitter saturation voltage Collector cut-off current Emitter cut-off current DC current gain Transition frequency Output capacitance CONDITIONS IC=50mA; IB=0 IC=10 A;IB=1 A VCB=200V; VCB=10V;f=1MHz 50 20 MIN 200 2SC3857 SYMBOL V(BR)CEO VCEsat ICBO IEBO hFE fT...