Inchange Semiconductor 2SC3857
The information contained herein is presented only as a guide for the applications of our products. The products are not designed for use in equipment which require specialized quality and/or reliability, or in equipment which could have applications in hazardous environments, aerospace industry, or medical field.| Part No. | 2SC3857 |
|---|---|
| Datasheet | 2SC3857 Download |
| Manufacturer |  Inchange Semiconductor |
| Description | NPN Transistor |
| Buy | Stock & Price |
DESCRIPTION
●Collector-Emitter Breakdown Voltage- V(BR)CEO= 200V(Min)●Good Linearity of hFE
●Complement to Type 2SA1493
●Minimum Lot-to-Lot variations for robust device performance and reliable operation
APPLICATIONS
●For audio and general purpose applicationsABSOLUTE MAXIMUM RATINGS
(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 200 V VCEO Collector-Emitter Voltage 200 V VEBO Emitter-Base Voltage 6 V IC Collector Current-Continuous 15 A IB Base Current-Continuous PC Collector Power Dissipation @ TC=25℃ TJ Junction Temperature 5 A 150 W 150 ℃ Tstg Storage Temperature Range -55~150 ℃ 2SC3857 isc website： 1 isc & iscsemi is registered trademark isc Silicon NPN Power Transistor 2SC3857ELECTRICAL CHARACTERISTICS
TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT V(BR)CEO Collector-Emitter Breakdown Voltage IC= 50mA ; IB= 0 200 V VCE(sat) Collector-Emitter Saturation Voltage IC= 10A; IB= 1A 3.0 V ICBO Collector Cutoff Current VCB= 200V; IE= 0 100 μA IEBO Emitter Cutoff Current VEB= 6V; IC= 0 100 μA hFE DC Current Gain IC= 5A; VCE= 4V 50 180 COB Output Capacitance IE= 0; VCB= 10V; ftest= 1.
