Download 2SC3852A Datasheet PDF
Inchange Semiconductor
2SC3852A
2SC3852A is Silicon NPN Power Transistor manufactured by Inchange Semiconductor.
DESCRIPTION - Collector-Emitter Breakdown Voltage- : V(BR)CEO= 80V(Min) - DC Current Gain- : h FE= 200(Min)@ IC= 0.5A - Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS - Driver for solenoid and motor, series regulator and general purpose applications. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage VCEO Collector-Emitter Voltage VEBO Emitter-Base Voltage Collector Current-Continuous Base Current-Continuous Collector Power Dissipation @TC=25℃ Junction Temperature ℃ Tstg Storage Temperature -55~150 ℃ 2SC3852A isc website:.iscsemi. 1 isc & iscsemi is registered trademark isc Silicon NPN Power Transistor ELECTRICAL CHARACTERISTICS Tj=25℃ unless otherwise...