2SC3856-P
2SC3856-P is Silicon NPN Transistor manufactured by Inchange Semiconductor.
DESCRIPTION
- High Collector-Emitter Breakdown Voltage-
: V(BR)CEO=180V(Min)
- Good Linearity of h FE
APPLICATIONS
- Designed for audio and general purpose applications
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE UNIT
VCBO
Collector-Base Voltage
200 V
VCEO
Collector-Emitter Voltage
180 V
VEBO
Emitter-Base Voltage
6V
IC Collector Current-Continuous
IB Base Current-Continuous
Collector Power Dissipation @ TC=25℃
TJ Junction Temperature
4A 130 W 150 ℃
Tstg Storage Temperature Range -55~150 ℃ isc Website：.iscsemi.cn
INCHANGE Semiconductor isc Silicon NPN Power Transistor isc Product Specification
ELECTRICAL CHARACTERISTICS
TC=25℃ unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
V(BR)CEO Collector-Emitter Breakdown Voltage IC= 50m A ; IB= 0
VCE(sat) Collector-Emitter Saturation Voltage IC= 5.0A; IB= 0.5A
ICBO Collector Cutoff Current
VCB= 200V ; IE= 0
IEBO Emitter Cutoff Current
VEB= 6V; IC= 0 h FE DC Current Gain COB Output Capacitance f T Current-Gain- Bandwidth Product Switching times
IC= 3A ; VCE= 4V IE= 0 ; VCB= 10V;ftest= 1.0MHz IE=-0.5A ; VCE= 12V ton Turn-on Time tstg Storage Time tf Fall...
