High Collector-Emitter Breakdown Voltage-
: V(BR)CEO=180V(Min)
Good Linearity of hFE
APPLICATIONS
Designed for audio and general purpose applications
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE UNIT
VCBO
Collector-Base Voltage
200 V
VCEO
Collector-Emitter Voltage
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INCHANGE Semiconductor
isc Silicon NPN Power Transistor
isc Product Specification
2SC3856-P
DESCRIPTION ·High Collector-Emitter Breakdown Voltage-
: V(BR)CEO=180V(Min) ·Good Linearity of hFE
APPLICATIONS ·Designed for audio and general purpose applications
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE UNIT
VCBO
Collector-Base Voltage
200 V
VCEO
Collector-Emitter Voltage
180 V
VEBO
Emitter-Base Voltage
6V
IC Collector Current-Continuous
15
A
IB Base Current-Continuous
PC
Collector Power Dissipation @ TC=25℃
TJ Junction Temperature
4A 130 W 150 ℃
Tstg Storage Temperature Range -55~150 ℃
isc Website：www.iscsemi.
2SC3856-P Datasheet
