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2SC3856-P - Silicon NPN Transistor

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Part number 2SC3856-P
Manufacturer Inchange Semiconductor
File Size 581.72 KB
Description Silicon NPN Transistor
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High Collector-Emitter Breakdown Voltage- : V(BR)CEO=180V(Min) Good Linearity of hFE APPLICATIONS Designed for audio and general purpose applications ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 200 V VCEO Collector-Emitter Voltage
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