Inchange Semiconductor 2SC3856
The information contained herein is presented only as a guide for the applications of our products. The products are not designed for use in equipment which require specialized quality and/or reliability, or in equipment which could have applications in hazardous environments, aerospace industry, or medical field.| Part No. | 2SC3856 |
|---|---|
| Datasheet | 2SC3856 Download |
| Manufacturer |  Inchange Semiconductor |
| Description | NPN Transistor |
| Buy | Stock & Price |
DESCRIPTION
●High Collector-Emitter Breakdown Voltage- : V(BR)CEO=180V(Min)●Good Linearity of hFE
●Complement to Type 2SA1492
●Minimum Lot-to-Lot variations for robust device performance and reliable operation
APPLICATIONS
●Designed for audio and general purpose applicationsABSOLUTE MAXIMUM RATINGS
(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 200 V VCEO Collector-Emitter Voltage 180 V VEBO Emitter-Base Voltage 6 V IC Collector Current-Continuous 15 A IB Base Current-Continuous PC Collector Power Dissipation @ TC=25℃ TJ Junction Temperature 4 A 130 W 150 ℃ Tstg Storage Temperature Range -55~150 ℃ 2SC3856 isc website： 1 isc & iscsemi is registered trademark isc Silicon NPN Power Transistor 2SC3856ELECTRICAL CHARACTERISTICS
TC=25℃ unless otherwise specified SYMBOL PARAMETER V(BR)CEO Collector-Emitter Breakdown Voltage CONDITIONS IC= 50mA ; IB= 0 VCE(sat) Collector-Emitter Saturation Voltage IC= 5.0A; IB= 0.5A ICBO Collector Cutoff Current VCB= 200V ; IE= 0 IEBO Emitt...