2SC3852A Datasheet and Specifications PDF

The 2SC3852A is a Silicon NPN Transistor.

Key Specifications

PackageTO-220-3
Mount TypeThrough Hole
Max Operating Temp150 °C
Part Number2SC3852A Datasheet
ManufacturerSanken
Overview 2SC3852/3852A High hFE LOW VCE (sat) Silicon NPN Epitaxial Planar Transistor sAbsolute maximum ratings (Ta=25°C) Ratings Symbol 2SC3852 2SC3852A Unit VCBO 80 100 V VCEO 60 80 V VEBO 6 . ±0.2 1.35±0.15 1.35±0.15 2.54 0.85 +0.2 -0.1 2.54 0.45 +-00..12 2.2±0.2 2.4±0.2 BCE Weight : Approx 2.0g a. Part No. b. Lot No. Collector Current IC(A) I C
* V CE Characteristics (Typical) 3 IB=12mA 8mA 5mA 2 3mA 2mA 1 1mA 0.5mA 0 0 1 2 3 4 5 6 Collector-Emitter Voltage VCE(V.
Part Number2SC3852A Datasheet
DescriptionSilicon NPN Power Transistor
ManufacturerInchange Semiconductor
Overview ·Collector-Emitter Breakdown Voltage- : V(BR)CEO= 80V(Min) ·DC Current Gain- : hFE= 200(Min)@ IC= 0.5A ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS . 80 V VCE(sat) Collector-Emitter Saturation Voltage IC= 2A; IB= 50mA ICBO Collector Cutoff Current VCB= 100V; IE= 0 0.5 V 10 μA IEBO Emitter Cutoff Current VEB= 6V; IC= 0 10 μA hFE DC Current Gain IC= 0.5A; VCE= 4V 400 COB Output Capacitance IE= 0; VCB= 10V; f= 1MHz 50 pF fT C.

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