2SC4111 Description
Product Specification Silicon NPN Power Transistors CHARACTERISTICS Tj=25 unless otherwise specified PARAMETER Eemitter-base breakdown voltage Collector-emitter saturation voltage Base-emitter saturation voltage CONDITIONS IE=1mA ;IC=0 IC=7A ;IB=2.5A IC=7A ;IB=2.5A VCB=750V; IE=0 ICBO Collector cut-off current VCB=1500V; IE=0 hFE-1 hFE-2 fT DC current gain DC current gain Transition frequency IC=1A.