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SavantIC

2SC5129 Datasheet Preview

2SC5129 Datasheet

SILICON POWER TRANSISTOR

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www.datSasaheveat4nu.tcIoCm Semiconductor
Silicon NPN Power Transistors
Product Specification
2SC5129
DESCRIPTION
·With TO-3P(H)IS package
·High speed
·High voltage
·Low saturation voltage
APPLICATIONS
·Horizontal deflection output for high
resolution display,colorTV
·High speed switching applications
PINNING
PIN
1
2
3
DESCRIPTION
Base
Collector
Emitter
Fig.1 simplified outline (TO-3P(H)IS) and symbol
Absolute maximum ratings(Ta=25 )
SYMBOL
PARAMETER
VCBO
VCEO
VEBO
IC
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
ICM Collector current-Peak
IB Base current
PT Total power dissipation
Tj Junction temperature
Tstg Storage temperature
CONDITIONS
Open emitter
Open base
Open collector
TC=25
VALUE
1500
600
5
10
20
5
50
150
-55~150
UNIT
V
V
V
A
A
A
W




SavantIC

2SC5129 Datasheet Preview

2SC5129 Datasheet

SILICON POWER TRANSISTOR

No Preview Available !

www.datSasaheveat4nu.tcIoCm Semiconductor
Silicon NPN Power Transistors
Product Specification
2SC5129
CHARACTERISTICS
Tj=25 unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
V(BR)CEO Collector-emitter breakdown voltage IC=10mA ;IB=0
VCEsat Collector-emitter saturation voltage IC=6A; IB=1.5A
VBEsat
Base-emitter saturation voltage
IC=6A ;IB=1.5A
ICBO
IEBO
hFE-1
hFE-2
Collector cut-off current
Emitter cut-off current
DC current gain
DC current gain
VCB=1500V; IE=0
VEB=5V; IC=0
IC=1A ; VCE=5V
IC=6A ; VCE=5V
Cob Collector output capacitance
IE=0 ; VCB=10V,f=1MHz
fT Transition frequency
Switching times (inductive load)
IC=0.1A ; VCE=10V
ts Storage time
tf Fall time
ICP=5A;IB1(end) =1A
fH=64kHz
MIN TYP. MAX UNIT
600 V
3.0 V
1.4 V
1 mA
10 µA
10 30
48
135 pF
1.7 MHz
4.0 µs
0.3 µs
2


Part Number 2SC5129
Description SILICON POWER TRANSISTOR
Maker SavantIC
Total Page 4 Pages
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