Datasheet Details
| Part number | 2SC5129 |
|---|---|
| Manufacturer | Inchange Semiconductor |
| File Size | 177.20 KB |
| Description | NPN Transistor |
| Datasheet | 2SC5129-INCHANGE.pdf |
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Overview: isc Silicon NPN Power Transistor.
| Part number | 2SC5129 |
|---|---|
| Manufacturer | Inchange Semiconductor |
| File Size | 177.20 KB |
| Description | NPN Transistor |
| Datasheet | 2SC5129-INCHANGE.pdf |
|
|
|
·High Breakdown Voltage- : VCBO= 1500V (Min) ·High Switching Speed ·Low Saturation Voltage ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Horizontal deflection output for high resolution display, color TV.
·High speed switching applications.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 1500 V VCEO Collector-Emitter Voltage 600 V VEBO Emitter-Base Voltage 5 V IC Collector Current-Continuous 10 A ICM Collector Current-Peak 20 A IB Base Current- Continuous PC Collector Power Dissipation @ TC=25℃ TJ Junction Temperature 5 A 50 W 150 ℃ Tstg Storage Temperature Range -55~150 ℃ INCHANGE Semiconductor 2SC5129 isc Website：www.iscsemi.cn 1 isc & iscsemi isregistered trademark isc Silicon NPN Power Transistor INCHANGE Semiconductor 2SC5129 ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP.
| Brand Logo | Part Number | Description | Manufacturer |
|---|---|---|---|
 |
2SC5129 | NPN TRANSISTOR | Toshiba Semiconductor |
 |
2SC5129 | Silicon NPN Transistor | Toshiba |
 |
2SC5129 | SILICON POWER TRANSISTOR | SavantIC |
| Part Number | Description |
|---|---|
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| 2SC5103 | NPN Transistor |
| 2SC5130 | NPN Transistor |
| 2SC5143 | NPN Transistor |
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| 2SC5148 | NPN Transistor |
| 2SC5149 | NPN Transistor |