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2SC512 - SILICON NPN TRANSISTOR

Download the 2SC512 datasheet PDF. This datasheet also covers the 2SC510 variant, as both devices belong to the same silicon npn transistor family and are provided as variant models within a single manufacturer datasheet.

Key Features

  • : High Braekdown Voltage : VcEO=100V (2SC510) : VCE0= 60V (2SC512) Various Uses for Medium Power : I c (Max. ) =1.5A : P c (Max. ) =800mW(Ta=25°C), 8W(Tc=25°C).
  • Complementary to 2SA510 and 2SA512.

📥 Download Datasheet

Note: The manufacturer provides a single datasheet file (2SC510-Toshiba.pdf) that lists specifications for multiple related part numbers.

Datasheet Details

Part number 2SC512
Manufacturer Toshiba
File Size 120.51 KB
Description SILICON NPN TRANSISTOR
Datasheet download datasheet 2SC512 Datasheet

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Other Datasheets by Toshiba

Part Number Description
2SC5129 Silicon NPN Transistor
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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
SILICON NPN TRIPLE DIFFUSED TYPE (PCT RPOCESS) HIGH FREQUENCY POWER AMPLIFIER APPLICATIONS, HIGH VOLTAGE SWITCHING APPLICATIONS. REGULATOR APPLICATIONS. 5Tff i2SC512i Unit in mm 09.39MAX. 08.45 MAX FEATURES : High Braekdown Voltage : VcEO=100V (2SC510) : VCE0= 60V (2SC512) Various Uses for Medium Power : I c (Max.) =1.5A : P c (Max.) =800mW(Ta=25°C), 8W(Tc=25°C) • Complementary to 2SA510 and 2SA512. MAXIMUM RATINGS (Ta=25°C) CHARACTERISTIC SYMBOL Collector-Base Voltage 2SC510 2SC512 V CB0 CollectorEmitter Voltage 2SC510 2SC512 V CE0 Emitter-Base Voltage Collector Current Base Current v EB0 ic IB Collector Power Dissipation Ta=25°C Tc=25°C ?C Junction Temperatuer Storage Temperature Range T J T stg RATING 140 100 100 60 5 1.5 300 800 8 175 -65M.