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SavantIC

2SD1236L Datasheet Preview

2SD1236L Datasheet

SILICON POWER TRANSISTOR

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SavantIC Semiconductor
Silicon NPN Power Transistors
Product Specification
2SD1236L
DESCRIPTION
www.dat·aWshiethet4Tu.Oco-m220C package
·Complement to type 2SB920L
·Low collector saturation voltage
·Large current capacity.
APPLICATIONS
·Relay drivers,high speed inverters,
converters,and other general
high-current switching applications
PINNING
PIN
1
2
3
DESCRIPTION
Base
Collector;connected to
mounting base
Emitter
Absolute maximum ratings(Ta=25 )
SYMBOL
PARAMETER
VCBO
Collector-base voltage
VCEO
VEBO
IC
ICM
Collector-emitter voltage
Emitter-base voltage
Collector current (DC)
Collector current-peak
PC Collector dissipation
Tj Junction temperature
Tstg Storage temperature
CONDITIONS
Open emitter
Open base
Open collector
TC=25
VALUE
90
80
6
5
9
30
1.75
150
-55~150
UNIT
V
V
V
A
A
W




SavantIC

2SD1236L Datasheet Preview

2SD1236L Datasheet

SILICON POWER TRANSISTOR

No Preview Available !

SavantIC Semiconductor
Silicon NPN Power Transistors
Product Specification
2SD1236L
CHARACTERISTICS
Tj=25 unless otherwise specified
www.datasheet4u.com
SYMBOL
PARAMETER
CONDITIONS
V(BR)CEO Collector-emitter breakdown voltage IC=1mA ;RBE=;
V(BR)CBO Collector-base breakdown voltage
IC=1mA ;IE=0
V(BR)EBO Emitter-base breakdown voltage
IE=1mA; IC=0
VCEsat
ICBO
IEBO
hFE-1
Collector-emitter saturation voltage IC=3A; IB=0.3A
Collector cut-off current
VCB=80V; IE=0
Emitter cut-off current
VEB=4V; IC=0
DC current gain
IC=1A ; VCE=2V
hFE-2
DC current gain
IC=3A ; VCE=2V
fT Transition frequency
Switching times
IC=1A ; VCE=5V
ton Turn-on time
ts Storage time
tf Fall time
IC=10IB1=-10IB2=2A
VCC=50V,RL=25C
MIN TYP. MAX UNIT
80 V
90 V
6V
0.4 V
100 µA
100 µA
70 280
30
20 MHz
0.1 µs
1.2 µs
0.4 µs
hFE-1 Classifications
QRS
70-140 100-200 140-280
2


Part Number 2SD1236L
Description SILICON POWER TRANSISTOR
Maker SavantIC
Total Page 4 Pages
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