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2SD1236 - PNP / NPN Epitaxial Planar Silicon Transistors

Key Features

  • Low collector-to-emitter saturation voltage : VCE(sat)=--0.5V (PNP), 0.4V (NPN) max.
  • Large current capacity. [2SB920 / 2SD1236] 10.2 3.6 5.1 4.5 1.3 2.7 15.1 6.3 18.0 5.6 1.2 2.7 14.0 0.8 Specifications ( ) : 2SB920 Absolute Maximum Ratings at Ta=25°C Parameter Collector-to-Base Voltage Collector-to-Emitter Voltage Emitter-to-Base Voltage Collector Current Collector Current (Pulse) Symbol VCBO VCEO VEBO IC ICP Collector Dissipation PC Junction Temperature Storag.

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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Ordering number : ENN1027A 2SB920 / 2SD1236 PNP / NPN Epitaxial Planar Silicon Transistors 2SB920 / 2SD1236 Large Current Switching Applications Applications • Large current switching of relay drivers, high-speed inverters, converters. Package Dimensions unit : mm 2010C Features • Low collector-to-emitter saturation voltage : VCE(sat)=--0.5V (PNP), 0.4V (NPN) max. • Large current capacity. [2SB920 / 2SD1236] 10.2 3.6 5.1 4.5 1.3 2.7 15.1 6.3 18.0 5.6 1.2 2.7 14.0 0.