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2SD1238 Datasheet NPN Transistor

Manufacturer: Inchange Semiconductor

Overview: isc Silicon NPN Power Transistors.

General Description

·Low Collector Saturation Voltage : VCE(sat)= 0.4V(Max)@ IC= 6A ·Wide Area of Safe Operation ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for relay drivers , high-speed inverters, converters,and other general high-current switching applications ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 120 V VCEO Collector-Emitter Voltage 120 V VEBO Emitter-Base Voltage 5 V IC Collector Current-Continuous PC Collector Power Dissipation @ TC=25℃ TJ Junction Temperature 12 A 80 W 150 ℃ Tstg Storage Temperature Range -55~150 ℃ 2SD1238 isc website:www.iscsemi.com 1 isc & iscsemi is registered trademark isc Silicon NPN Power Transistors ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS V(BR)CEO Collector-Emitter Breakdown Voltage IC= 30mA ;

RBE= ∞ VCE(sat) Collector-Emitter Saturation Voltage IC= 6A;

IB= 0.6A VbE(sat) Base -Emitter Saturation Voltage IC= 6A;

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